GT80J101B Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT

GT80J101B
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT80J101B
High Power Switching Applications
• Enhancement mode type
• High speed: t_f = 0.40 µs (max) (I_C = 80 A)
• Low saturation voltage: V_{CE (sat)} = 2.9 V (max) (I_C = 80 A)
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-emitter voltage
Gate-emitter voltage
Continuous collector
current
@Tc = 100°C
@Tc = 25°C
Pulsed collector current (Note 1)
Collector power
dissipation
@Tc = 100°C
@Tc = 25°C
@Ta = 25°C
Junction temperature
Storage temperature
Screw torque
Symbol
V_CES
V_GES
I_C
I_CP
P_C
T_j
T_stg

Rating
600
±20
33
80
160
80
200
3.5
150
−55~150
0.8
Unit
V
V
A
A
W
°C
°C
N·m
Note 1: The Maximum rating of I_CP=160A is limited by pulse (1ms).
Refer to the graph of safe operating area for the detail.
Unit: mm
JEDEC
?
JEITA
?
TOSHIBA
2-21F2C
Weight: 9.75 g (typ.)
Thermal Characteristics
Characteristics
Symbol
Thermal resistance , junction to case
(Tc = 25°C)
Thermal resistance , junction to air
(Ta = 25°C)
R_{th (j-c)}
R_{th (j-a)}
Rating
0.625
35.7
Unit
°C/W
°C/W
MARKING
TOSHIBA
80J101B
JAPAN
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
1
2006-06-05