GT60N321 Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – Insulated Gate Bipolar Transistor Silicon N Channel IGBT

GT60N321
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT60N321
High Power Switching Applications
The 4th Generation
Unit: mm
· FRD included between emitter and collector
· Enhancement-mode
· High speed IGBT : tf = 0.25 µs (typ.) (IC = 60 A)
FRD : trr = 0.8 µs (typ.) (di/dt = −20 A/µs)
· Low saturation voltage: VCE (sat) = 2.3 V (typ.) (IC = 60 A)
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
DC
1 ms
Emitter-Collector
Forward Current
DC
1 ms
Collector Power Dissipation
(Tc = 25°C)
Junction Temperature
Storage Temperature
Screw Torque
symbol
V_CES
V_GES
I_C
I_CP
I_ECF
I_ECFP
P_C
T_j
T_stg
¾
Rating
1000
±25
60
120
15
120
170
150
-55~150
0.8
Unit
V
V
A
A
W
°C
°C
Nï½¥m
Equivalent Circuit
Collector
JEDEC
―
JEITA
―
TOSHIBA
2-21F2C
Weight: 9.75 g (typ.)
Gate
Emitter
1
2002-01-18