GT60M303 Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT

GT60M303
TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT
GT60M303
HIGH POWER SWITCHING APPLICATIONS
Unit: mm
z Fourth generation IGBT
z FRD included between emitter and collector
z Enhancement mode type
z High speed I_GBT : t_f = 0.25μs (TYP.)
FRD : t_rr = 0.7μs (TYP.)
z Low saturation voltage : V_{CE (sat)} = 2.1V (TYP.)
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector−Emitter Voltage
Gate−Emitter Voltage
DC
Collector Current
1ms
Emitter−Collector
DC
Foward Current
1ms
Collector Power Dissipation
(Tc = 25°C)
Junction Temperature
Storage Temperature Range
Screw Torque
V_CES
V_GES
I_C
I_CP
I_ECF
I_ECFP
P_C
T_j
T_stg
―
900
V
±25
V
60
A
120
15
A
120
170
W
150
°C
−55~150
°C
0.8
N·m
JEDEC
⎯
JEITA
⎯
TOSHIBA
2-21F2C
Weight: 9.75 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
EQUIVALENT CIRCUIT
MARKING
TOSHIBA
GT60M303
JAPAN
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
1
2006-11-01