GT60J323 Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – Gate Bipolar Transistor Silicon N Channel IGBT

GT60J323
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT60J323
Current Resonance Inverter Switching Application
Unit: mm
• Enhancement mode type
• High speed : t_f = 0.16 μs (typ.) (I_C = 60A)
• Low saturation voltage: V_{CE (sat)} = 1.9 V (typ.) (I_C = 60A)
• FRD included between emitter and collector
• Fourth generation IGBT
• TO-3P(LH) (Toshiba package name)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Collector-emitter voltage
Gate-emitter voltage
Continuous collector ^{@ Tc = 100°C}
current
@ Tc = 25°C
Pulsed collector current
DC
Diode forward current
Pulsed
Collector power
dissipation
@ Tc = 100°C
@ Tc = 25°C
Junction temperature
Storage temperature range
Symbol
V_CES
V_GES
I_C
I_CP
I_F
I_FP
P_C
T_j
T_stg
Rating
Unit
600
V
±25
V
33
A
60
120
A
30
A
120
68
W
170
150
°C
−55 to 150
°C
JEDEC
―
JEITA
―
TOSHIBA
2-21F2C
Weight: 9.75 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Thermal resistance (IGBT)
Thermal resistance (diode)
Symbol
R_{th (j-c)}
R_{th (j-c)}
Max
Unit
0.74
°C/W
1.56
°C/W
Equivalent Circuit
Marking
Gate
Collector
Emitter
TOSHIBA
GT60J323
JAPAN
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
1
2006-11-01