GT60J322 Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – The 4th Generation Soft Switching Applications

GT60J322
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT60J322
The 4th Generation
Soft Switching Applications
Unit: mmç
• Enhancement-mode
• Low saturation voltage: VCE (sat) = 1.25 V (typ.) (IC = 60 A)
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-emitter voltage
Gate-emitter voltage
Collector current
Emitter-collector forward
current
Collector power dissipation
(Tc = 25°C)
Junction temperature
Storage temperature range
Screw torque
DC
1 ms
DC
1 ms
Equivalent Circuit
Symbol
V_CES
V_GES
I_C
I_CP
I_ECF
I_ECPF
P_C
T_j
T_stg

Collector
Gate
Emitter
Rating
600
±25
60
120
60
120
200
150
−55~150
0.8
Unit
V
V
A
A
W
°C
°C
Nŋm
JEDEC
―
JEITA
―
TOSHIBA
2-21F2C
Weight: 9.75 g (typ.)
1
2002-01-18