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GT60J321 Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – The 4th Generation Soft Switching Applications
GT60J321
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT60J321
The 4th Generation
Soft Switching Applications
Unit: mm
· Enhancement-mode
· High speed: tf = 0.30 µs (typ.) (IC = 60 A)
· Low saturation voltage: VCE (sat) = 1.55 V (typ.) (IC = 60 A)
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-emitter voltage
Gate-emitter voltage
Collector current
Emitter-collector forward
current
Collector power dissipation
(Tc = 25°C)
Junction temperature
Storage temperature range
Screw torque
DC
1 ms
DC
1 ms
Symbol
VCES
VGES
IC
ICP
IECF
IECPF
PC
Tj
Tstg
¾
Rating
600
±25
60
120
60
120
200
150
-55~150
0.8
Unit
V
V
A
A
W
°C
°C
Nï½¥m
Equivalent Circuit
Collector
Gate
Emitter
JEDEC
―
JEITA
―
TOSHIBA
2-21F2C
Weight: 9.75 g (typ.)
1
2002-01-18