GT5J321 Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – High Power Switching Applications

TOSHIBA
GT5J321
Preliminary ^{TOSHIBA Insulated Gate Bipolar Transistor Silicon N Chanenel IGBT}
GT5J321
High Power Switching Applications
Fast Switching Applications
●　 _{The 4th generation}
●　 _{Enhancement-mode}
●　 _{Fast Switching(FS) :Operating frequency up to 150kHz(Reference)}
●　 _{High speed}
:t_f=0.05μs(typ.)
●　 _{Low switching loss :Eon=0.12mJ(typ.)}
:E_off=0.10mJ(typ.)
●　 _{Low saturation voltage} :V_CE(sat)=2.0V(typ.)
●　 _{FRD included between emitter and collector}
Maximum Ratings (Ta=25℃)
Characteristic
Symbol Ratings
Unit
Collector-emitter voltage
V_CES
600
V
Gate-emitter voltage
V_GES
±20
V
Collector current
DC
I_C
5
A
1ms
I_CP
10
Emitter-collector
forward current
DC
I_F
5
A
1ms
I_FM
10
Collector power dissipation
(Tc=25℃)
P_C
28
W
Junction temperature
Storage temperature range
T_j
150
℃
T_stg -55～150
℃
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