GT5G133 Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – Strobe Flash Applications

TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT5G133
GT5G133
Strobe Flash Applications
• Enhancement-mode
• Low gate drive voltage: V_GE = 2.5 V (min) (@I_C = 130 A)
• Peak collector current:
I_C = 130 A (max)
• Compact and Thin (TSON-8) package
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-emitter voltage
V_CES
400
V
DC
V_GES
±4
Gate-emitter voltage
V
Pulse
V_GES
±5
Collector current
Pulse (Note 1)
I_CP
130
A
Collector power
(Note 2a)
P_C (1)
0.83
W
dissipation(t = 10 s)
(Note 2b)
P_C (2)
0.69
W
Junction temperature
T_j
150
°C
Storage temperature range
T_stg
−55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature,
etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.)
are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba
Semiconductor Reliability Handbook (“Handling Precautions”/“Derating
Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Thermal resistance , junction to
ambient (t = 10 s)
(Note2a)
R_{th (j-a) (1)}
Thermal resistance , junction to
ambient (t = 10 s)
(Note2b)
R_{th (j-a) (2)}
Rating
150
180
Unit
°C/W
°C/W
Marking (Note 3、Note 4)
8765
5G133
Part No. (or abbreviation code)
Product-specific code
Lot No
Unit: mm
1,2,3 Emitter
4
Gate
5,6,7,8 Collector
JEDEC
―
JEITA
―
TOSHIBA
2-3Y1A
Weight: 0.02 g (Typ.)
Circuit Configuration
8 76 5
1 23 4
Pin #1
1234
Note : For (Note 1) , (Note 2a) , (Note 2b) , (Note 3) and (Note 4) .
1
2010-01-15