GT5G103_06 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – STROBE FLASH APPLICATIONS

GT5G103
TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT
GT5G103
STROBE FLASH APPLICATIONS
z 3rd Generation
(A)
z High Input Impedance
z Low Saturation Voltage : V_{CE (sat)} = 8 V (Max.) (I_C = 130 A)
z Enhancement−Mode
z 4.5 V Gate Drive
Unit: mm
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
CHARACTERISTIC
SYMBOL
RATING
UNIT
(B)
Collector−Emitter Voltage
DC
Gate−Emitter Voltage
Pulse
Collector Current
DC
1 ms
Collector Power
Dissipation
Ta = 25°C
Tc = 25°C
Junction Temperature
Storage Temperature Range
V_CES
V_GES
V_GES
I_C
I_CP
P_C
P_C
T_j
T_stg
400
V
±6
V
±8
V
5
A
130
A
1.3
W
20
W
150
°C
−55~150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
JEDEC
⎯
reliability significantly even if the operating conditions (i.e.
JEITA
⎯
operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
TOSHIBA (A) 2-7B5C (B) 2-7B6C
Please design the appropriate reliability upon reviewing the
Weight: 0.36 g (typ.)
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and
estimated failure rate, etc).
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC
SYMBOL
TEST CONDITION
Gate Leakage Current
Collector Cut−off Current
Gate−Emitter Cut−off Voltage
Collector−Emitter Saturation Voltage
Input Capacitance
Rise Time
Switching Time
Turn−on Time
Fall Time
Turn−off Time
Thermal Resistance
I_GES
I_CES
V_{GE (OFF)}
V_{CE (sat)}
C_ies
t_r
t_on
t_f
t_off
R_{th (j−c)}
V_GE = 6 V, V_CE = 0
V_CE = 400 V, V_GE = 0
I_C = 1 mA, V_CE = 5 V
I_C = 130 A, V_GE = 4.5 V (Pulsed)
V_CE = 10 V, V_GE = 0, f = 1 MHz
―
This transistor is an electrostatic sensitive device. Please handle with caution.
1
MIN TYP. MAX UNIT
―
―
10
μA
―
―
10
μA
0.5
―
1.2
V
―
5
8
V
― 1900 ―
pF
―
0.9
―
―
1.1
―
μs
―
2.0
―
―
2.4
―
―
― 6.25 °C / W
2006-11-02