GT50J328 Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – Current Resonance Inverter Switching Application Fourth Generation IGBT

GT50J328
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT50J328
Current Resonance Inverter Switching Application
Fourth Generation IGBT
Unit: mm
• Enhancement mode type
• High speed
: t_f = 0.1 μs (Typ.)
• Low saturation voltage : V_{CE (sat)} = 2.0 V (Typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-emitter voltage
V_CES
600
V
Gate-emitter voltage
V_GES
±25
V
DC
Continuous collector current
I_C
1ms
I_CP
50
A
120
Diode forward current
DC
I_F
1ms
I_FP
30
A
120
Collector power dissipation
(Tc = 25°C)
P_C
140
W
Junction temperature
Storage temperature range
T_j
150
°C
JEDEC
―
T_stg
−55 to 150
°C
JEITA
―
Note: Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
TOSHIBA
2-16C1C
temperature, etc.) may cause this product to decrease in the
Weight: 4.6 g (typ.)
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the
appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and
estimated failure rate, etc).
Equivalent Circuit
Marking
Gate
Collector
TOSHIBA
50J328
Emitter
Note 1: A line under a Lot No. identifies the indication of product Labels.
[[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Part No. (or abbreviation code)
Lot No.
Note 1
Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of
Product.
The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of
the use of certain hazardous substances in electrical and electronic equipment.
1
2011-03-08