GT50J327 Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT Current Resonance Inverter Switching Application

GT50J327
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT50J327
Current Resonance Inverter Switching Application
• Enhancement mode type
• High speed : tf = 0.19 µs (typ.) (IC = 50A)
• Low saturation voltage: VCE (sat) = 1.9 V (typ.) (IC = 50A)
• FRD included between emitter and collector
• Fourth generation IGBT
• TO-3P(N) (Toshiba package name)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-emitter voltage
Gate-emitter voltage
Continuous collector
current
@ Tc = 100°C
@ Tc = 25°C
Pulsed collector current
DC
Diode forward current
Pulsed
Collector power
dissipation
@ Tc = 100°C
@ Tc = 25°C
Junction temperature
Storage temperature range
V_CES
V_GES
I_C
I_CP
I_F
I_FP
P_C
T_j
T_stg
600
V
±25
V
29
A
50
100
A
20
A
40
56
W
140
150
°C
−55 to 150
°C
Thermal Characteristics
Characteristics
Thermal resistance (IGBT)
Thermal resistance (diode)
Symbol
R_{th (j-c)}
R_{th (j-c)}
Max
Unit
0.89
°C/W
2.7
°C/W
Equivalent Circuit
Marking
Unit: mm
1.Gate
2.Collector(heatsink)
3.Emitter
JEDEC

JEITA

TOSHIBA
2-16C1C
Weight: 4.6 g (typ.)
Gate
Collector
Emitter
TOSHIBA
GT50J327
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
1
2005-02-09