GT50J325 Datasheet, PDF (1/7 Pages) Toshiba Semiconductor – TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT

GT50J325
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT50J325
High Power Switching Applications
Fast Switching Applications
Unit: mm
· The 4^th generation
· Enhancement-mode
· Fast switching (FS): Operating frequency up to 50 kHz (reference)
· High speed: tf = 0.05 µs (typ.)
· Low switching loss: Eon = 1.30 mJ (typ.)
: Eoff = 1.34 mJ (typ.)
· Low saturation Voltage: VCE (sat) = 2.0 V (typ.)
· FRD included between emitter and collector
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-emitter voltage
Gate-emitter voltage
Collector current
DC
1 ms
Emitter-collector forward
current
DC
1 ms
Collector power dissipation
(Tc = 25°C)
Junction temperature
Storage temperature range
Symbol
V_CES
V_GES
I_C
I_CP
I_F
I_FM
P_C
T_j
T_stg
Rating
Unit
600
V
±20
V
50
A
100
50
A
100
240
W
150
°C
-55 to 150
°C
Thermal Characteristics
Characteristics
Thermal resistance (IGBT)
Thermal resistance (diode)
Symbol
R_{th (j-c)}
R_{th (j-c)}
Max
0.521
2.30
Unit
°C/W
°C/W
Equivalent Circuit
JEDEC
JEITA
TOSHIBA
Weight: 9.75 g
―
―
2-21F2C
Gate
Collector
Emitter
1