GT50J122 Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – Current Resonance Inverter Switching Application

GT50J122
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT50J122
Current Resonance Inverter Switching Application
Unit: mm
• Enhancement mode type
• High speed : t_f = 0.16 μs (typ.) (I_C = 60A)
• Low saturation voltage: V_{CE (sat)} = 1.9 V (typ.) (I_C = 60A)
• Fourth-generation IGBT
• TO-3P(N) (Toshiba package name)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-emitter voltage
V_CES
600
V
Gate-emitter voltage
V_GES
±25
V
Continuous collector ^{@ Tc = 100°C}
current
@ Tc = 25°C
I_C
31
A
50
Pulsed collector current
I_CP
Collector power
dissipation
@ Tc = 100°C
P_C
@ Tc = 25°C
Junction temperature
T_j
Storage temperature range
T_stg
120
A
62
W
156
150
°C
−55 to 150
°C
JEDEC
JEITA
TOSHIBA
―
―
2-16C1C
Note: Using continuously under heavy loads (e.g. the application of high
Weight: 4.6 g (typ.)
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Thermal resistance
Symbol
R_{th (j-c)}
Max
Unit
0.80
°C/W
Marking
TOSHIBA
GT50J122
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
1
2006-11-01