GT50J121 Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT

GT50J121
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT50J121
High Power Switching Applications
Fast Switching Applications
Unit: mm
• The 4^th generation
• Enhancement-mode
• Fast switching (FS): Operating frequency up to 50 kHz (reference)
• High speed: tf = 0.05 µs (typ.)
• Low switching loss: Eon = 1.30 mJ (typ.)
: Eoff = 1.34 mJ (typ.)
• Low saturation Voltage: VCE (sat) = 2.0 V (typ.)
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-emitter voltage
Gate-emitter voltage
Collector current
DC
1 ms
Collector power dissipation
(Tc = 25°C)
Junction temperature
Storage temperature range
Symbol
Rating
Unit
V_CES
V_GES
I_C
I_CP
P_C
600
V
±20
V
50
A
100
240
W
T_j
150
°C
T_stg
−55 to 150
°C
Thermal Characteristics
Characteristics
Thermal resistance
Symbol
R_{th (j-c)}
Max
0.521
Unit
°C/W
JEDEC
JEITA
TOSHIBA
Weight: 9.75 g
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2-21F2C
1
2002-03-18