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| GT40WR21 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – Discrete IGBTs Silicon N-Channel IGBT | |||
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Discrete IGBTs Silicon N-Channel IGBT
GT40WR21
GT40WR21
1. Applications
⢠Dedicated to Voltage-Resonant Inverter Switching Applications
Note: The product(s) described herein should not be used for any other application.
2. Features
(1) 6.5th generation
(2) The RC-IGBT consists of a freewheeling diode monolithically integrated in an IGBT chip.
(3) Enhancement mode
(4) High-speed switching
IGBT : tf = 0.15 µs (typ.) (IC = 40 A)
FWD : trr = 1.00 µs (typ.) (IF = 15 A)
(5) Low saturation voltage : VCE(sat) = 2.9 V (typ.) (IC = 40 A)
(6) High junction temperature : Tj = 175î (max)
3. Packaging and Internal Circuit
TO-3P(N)
1: Gate
2: Collector
3: Emitter
1
2012-06-05
Rev.1.0
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