GT40T321 Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – Consumer Application Voltage Resonance Inverter Switching Application

GT40T321
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT40T321
Consumer Application
Voltage Resonance Inverter Switching Application
Sixth Generation IGBT
Unit: mm
• FRD included between emitter and collector
• Enhancement mode type
• High speed
IGBT: t_f = 0.24 μs (typ.) (I_C = 40 A)
FRD: t_rr = 0.7 μs (typ.) (di/dt = −20 A/μs)
• Low saturation voltage
V_{CE (sat)} =2.15 V (typ.) (I_C = 40 A)
• High Junction temperature T_j = 175°C (max)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Collector-emitter voltage
Gate-emitter voltage
DC
Collector current
1ms
DC
Diode forward current
1ms
Collector power dissipation
(Tc = 25°C)
Junction temperature
Storage temperature
Symbol
V_CES
V_GES
I_C
I_CP
I_F
I_FP
P_C
T_j
T_stg
Rating
Unit
1500
V
±25
V
40
A
80
30
A
80
230
W
175
°C
-55 to 175
°C
JEDEC
⎯
JEITA
⎯
TOSHIBA
2-16C1C
Weight: 4.6 g (typ.)
Note 1: Ensure that the channel temperature does not exceed 175°C during use of the device.
Note 2:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor
Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data
(i.e. reliability test report and estimated failure rate, etc).
In general, loss of IGBT increases more when it has positive temperature coefficient and gets higher
temperature. In case that the temperature rise due to loss of IGBT exceeds the heat release capacity of a
device, it leads to thermorunaway and results in destruction. Therefore, please design heat release of a device
with due consideration to the temperature rise of IGBT.
1
2009-12-04