GT40T302 Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – Insulated Gate Bipolar Transistor Silicon N Channel IGBT

GT40T302
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT40T302
Parallel Resonance Inverter Switching Applications
Unit: mm
• FRD included between emitter and collector
• Enhancement mode
• High speed IGBT: t_f = 0.23 μs (typ.) (I_C = 40 A)
FRD: t_rr = 0.7 μs (typ.) (di/dt = −20 A/μs)
• Low saturation voltage: V_{CE (sat)} = 3.7 V (typ.) (I_C = 40 A)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-emitter voltage
V_CES
1500
V
Gate-emitter voltage
V_GES
±25
V
Collector current
DC
I_C
1 ms
I_CP
40
A
80
DC
I_F
Diode forward current
1 ms
I_FP
30
A
80
Collector power dissipation (Tc = 25°C)
P_C
200
W
Junction temperature
Storage temperature range
T_j
150
°C
T_stg
−55 to 150
°C
JEDEC
―
JEITA
―
TOSHIBA
2-21F2C
Weight: 9.75 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Equivalent Circuit
Marking
Gate
Collector
Emitter
TOSHIBA
GT40T302
JAPAN
Part No. (or abbreviation code)
Lot No.
A line indicates
Lead(Pb)-Free Finish
1
2008-12-26