GT40Q323_06 Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – Silicon N Channel IGBT Voltage Resonance Inverter Switching Application

GT40Q323
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT40Q323
Voltage Resonance Inverter Switching Application
Unit: mm
• Enhancement-mode
• High speed: t_f = 0.14 μs (typ.) (I_C = 40A)
• FRD included between emitter and collector
• 4th generation
• TO-3P (N) (Toshiba package name)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-emitter voltage
Gate-emitter voltage
Continuous collector ^{@ Tc = 100°C}
current
@ Tc = 25°C
Pulsed collector current
DC
Diode forward current
Pulsed
Collector power
dissipation
@ Tc = 100°C
@ Tc = 25°C
Junction temperature
Storage temperature range
V_CES
V_GES
I_C
I_CP
I_F
I_FP
P_C
T_j
T_stg
1200
V
±25
V
20
A
39
80
A
10
A
80
80
W
200
150
°C
−55 to 150
°C
JEDEC
―
JEITA
―
TOSHIBA
2-16C1C
Weight: 4.6 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Thermal resistance (IGBT)
Thermal resistance (diode)
Symbol
R_{th (j-c)}
R_{th (j-c)}
Max
0.625
1.79
Unit
°C/W
°C/W
Equivalent Circuit
Collector
Gate
Emitter
1
2006-11-01