GT40Q322 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – Voltage Resonance Inverter Switching Application

GT40Q322
TOSHIBA Insulated Gate bipolar Transistor Silicon N Channel IGBT
Preliminary
GT40Q322
Voltage Resonance Inverter Switching Application
• Enhancement-mode
• High speed : tf = 0.14 µs (typ.) (IC = 40A)
• FRD included between emitter and collector
• The 4th generation
• TO-3P(N) (Toshiba package name)
Unit: mmç
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-emitter voltage
Gate-emitter voltage
Continuous collector
current
@ Tc = 100°C
@ Tc = 25°C
Pulsed collector current
DC
Diode forward current
Pulsed
Collector power
dissipation
@ Tc = 100°C
@ Tc = 25°C
Junction temperature
Storage temperature range
V_CES
V_GES
I_C
I_CP
I_F
I_FP
P_C
T_j
T_stg
1200
V
±25
V
20
A
39
80
A
10
A
80
80
W
200
W
150
°C
−55 to 150
°C
JEDEC
―
JEITA
―
TOSHIBA
2-16C1C
Weight: 4.6 g (typ.)
Thermal Characteristics
Characteristics
Thermal resistance (IGBT)
Thermal resistance (diode)
Symbol
R_{th (j-c)}
R_{th (j-c)}
Max
0.625
1.79
Unit
°C/W
°C/W
Equivalent Circuit
Collector
Gate
Emitter
1
2003-07-07