GT40Q321_06 Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – Silicon N Channel IEGT Voltage Resonance Inverter Switching Application

GT40Q321
TOSHIBA Injection Enhanced Gate Transistor Silicon N Channel IEGT
GT40Q321
Voltage Resonance Inverter Switching Application
• Fifth-generation IGBT
• Enhancement mode type
• High speed : t_f = 0.41 μs (typ.) (I_C = 40A)
• Low saturation voltage: V_{CE (sat)} = 2.8 V (typ.) (I_C = 40A)
• FRD included between emitter and collector
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-emitter voltage
Gate-emitter voltage
Continuous collector ^{@ Tc = 100°C}
current
@ Tc = 25°C
Pulsed collector current
DC
Diode forward current
Pulsed
Collector power
dissipation
@ Tc = 100°C
@ Tc = 25°C
Junction temperature
Storage temperature range
V_CES
V_GES
I_C
I_CP
I_F
I_FP
P_C
T_j
T_stg
1200
V
±25
V
23
A
42
80
A
10
A
80
68
W
170
W
150
°C
−55 to 150
°C
JEDEC
―
JEITA
―
TOSHIBA
2-16C1C
Weight: 4.6 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Thermal resistance (IGBT)
Thermal resistance (diode)
Symbol
R_{th (j-c)}
R_{th (j-c)}
Max
Unit
0.74
°C/W
1.79
°C/W
Equivalent Circuit
Marking
Gate
Collector
Emitter
TOSHIBA
GT40Q321
1
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
2006-11-01