GT40Q321 Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – Voltage Resonance Inverter Switching Application

GT40Q321
TOSHIBA Injection Enhanced Gate Transistor Silicon N Channel IEGT
GT40Q321
Voltage Resonance Inverter Switching Application
· The 5th generation
· Enhancement-mode
· High speed : tf = 0.41 µs (typ.) (IC = 40A)
· Low saturation voltage: VCE (sat) = 2.8 V (typ.) (IC = 40A)
· FRD included between emitter and collector
Unit: mm
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-emitter voltage
Gate-emitter voltage
Continuous collector
current
@ Tc = 100°C
@ Tc = 25°C
Pulsed collector current
DC
Diode forward current
Pulsed
Collector power
dissipation
@ Tc = 100°C
@ Tc = 25°C
Junction temperature
Storage temperature range
Symbol
V_CES
V_GES
I_C
I_CP
I_F
I_FP
P_C
T_j
T_stg
Rating
Unit
1200
V
±25
V
23
A
42
80
A
10
A
80
68
W
170
W
150
°C
−55 to 150
°C
JEDEC
―
JEITA
―
TOSHIBA
2-16C1C
Weight: 4.6 g (typ.)
Thermal Characteristics
Characteristics
Thermal resistance (IGBT)
Thermal resistance (diode)
Symbol
R_{th (j-c)}
R_{th (j-c)}
Max
Unit
0.74
°C/W
1.79
°C/W
Equivalent Circuit
Collector
Gate
Emitter
1
2003-02-05