GT40J121 Datasheet, PDF (1/8 Pages) Toshiba Semiconductor – Discrete IGBTs Silicon N-Channel IGBT

Discrete IGBTs Silicon N-Channel IGBT
GT40J121
1. Applications
• Dedicated to Current-Resonant Inverter Switching Applications
• Dedicated to Partial-Switching Power Factor Correction (PFC) Applications
Note: The product(s) described herein should not be used for any other application.
2. Features
(1) Sixth generation
(2) Enhancement mode
(3) High-speed switching: t_f = 0.20 µs (typ.) (I_C = 40 A)
(4) Low saturation voltage: V_CE(sat) = 1.45 V (typ.) (I_C = 40 A)
(5) TO-3P(N)IS (Toshiba package name)
3. Packaging and Internal Circuit
GT40J121
TO-3P(N)IS
1: Gate
2: Collector
3: Emitter
1
2011-06-30
Rev.1.0