GT40G121 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT

GT40G121
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT40G121
The 4th Generation
Current Resonance Inverter Switching Applications
Unit: mm
· Enhancement-mode
· High speed: tf = 0.30 µs (typ.) (IC = 60 A)
· Low saturation voltage: VCE (sat) = 1.8 V (typ.) (IC = 60 A)
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-emitter voltage
Gate-emitter voltage
Collector current
DC
1 ms
Collector power dissipation (Tc = 25°C)
Junction temperature
Storage temperature range
Symbol
V_CES
V_GES
I_C
I_CP
P_C
T_j
T_stg
Rating
Unit
400
V
±25
V
40
A
100
100
W
150
°C
-55~150
°C
Electrical Characteristics (Ta = 25°C)
JEDEC
TO-220AB
JEITA
―
TOSHIBA
2-10P1C
Weight: 2 g (typ.)
Characteristics
Gate leakage current
Collector cut-off current
Gate-emitter cut-off voltage
Collector-emitter saturation voltage
Input capacitance
Rise time
Switching time
Turn-on time
Fall time
Turn-off time
Thermal resistance
Symbol
Test Condition
I_GES
I_CES
V_{GE (OFF)}
V_{CE (sat)}
C_ies
t_r
t_on
t_f
t_off
R_th(j-c)
V_GE = ±25 V, V_CE = 0
V_CE = 400 V, V_GE = 0
I_C = 60 mA, V_CE = 5 V
I_C = 60 A, V_GE = 15 V
V_CE = 10 V, V_GE = 0, f = 1 MHz
39 W
15 V
0
-15 V
¾
200 V
Min Typ. Max Unit
¾
¾ ±500 nA
¾
¾
1.0 mA
3.0
¾
6.0
V
¾
1.8 2.5
V
¾ 3900 ¾
pF
¾ 0.33 ¾
¾ 0.43 ¾
ms
¾ 0.30 0.40
¾ 0.54 ¾
¾
¾ 1.25 °C/W
1
2003-03-18