GT35J321 Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – Fourth-generation IGBT Current Resonance Inverter Switching Applications

GT35J321
TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT
GT35J321
Fourth-generation IGBT
Current Resonance Inverter Switching Applications
Unit: mm
z Enhancement mode
z High speed: t_f = 0.19 μs (typ.) (I_C = 50 A)
z Low saturation voltage: V_{CE (sat)} = 1.9 V (typ.) (I_C = 50 A)
z FRD included between emitter and collector
z Toshiba package name: TO-3P(N)IS
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector−emitter voltage
Gate−emitter voltage
@ Tc = 100°C
Collector current (DC)
@ Tc = 25°C
Collector current (pulse)
Diode forward current
DC
Pulse
Collector power
dissipation
@ Tc = 100°C
@ Tc = 25°C
Junction temperature
Storage temperature range
V_CES
V_GES
I_C
I_CP
I_F
I_FP
P_C
T_j
T_stg
600
V
±25
V
18
A
37
100
A
20
A
40
30
W
75
150
°C
−55 to 150
°C
1. GATE
2. COLLECTOR
3. EMITTER
JEDEC
⎯
JEITA
⎯
TOSHIBA
2-16F1A
Weight: 5.8 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Thermal resistance (IGBT)
Thermal resistance (diode)
Equivalent Circuit
Symbol
R_{th (j-c)}
R_{th (j-c)}
Max
Unit
1.67
°C/W
3.2
°C/W
Marking
Gate
Collector
Emitter
TOSHIBA
GT35J321
1
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
2008-03-26