GT30J341 Datasheet, PDF (1/10 Pages) Toshiba Semiconductor – Discrete IGBTs Silicon N-Channel IGBT

Discrete IGBTs Silicon N-Channel IGBT
GT30J341
1. Applications
• Motor Drivers
2. Features
(1) Sixth generation
(2) Low saturation voltage: V_CE(sat) = 1.5 V (typ.) (I_C = 30 A)
(3) High junction temperature: T_j = 175 (max)
(4) FRD included between emitter and collector
3. Packaging and Internal Circuit
GT30J341
TO-3P(N)
1: Gate
2: Collector (Heat sink)
3: Emitter
1
2012-03-29
Rev.1.0