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| GT30J122A Datasheet, PDF (1/7 Pages) Toshiba Semiconductor – Dedicated to Current-Resonant Inverter Switching Applications Dedicated to Partial-Switching Power Factor rrection (PFC) Applications | |||
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Discrete IGBTs Silicon N-Channel IGBT
GT30J122A
1. Applications
⢠Dedicated to Current-Resonant Inverter Switching Applications
⢠Dedicated to Partial-Switching Power Factor Correction (PFC) Applications
Note: The product(s) described herein should not be used for any other application.
2. Features
(1) 4th generation
(2) Enhancement mode
(3) High-speed switching : tf = 0.20 µs (typ.) (IC = 50 A)
(4) Low saturation voltage : VCE(sat) = 1.7 V (typ.) (IC = 50 A)
3. Packaging and Internal Circuit
GT30J122A
TO-3P(N)
1 : Gate
2 : Collector
3 : Emitter
1
2012-06-25
Rev.1.0
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