GT30J122 Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – 4TH GENERATION IGBT CURRENT RESONANCE INVERTER SWITCHING

GT30J122
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT30J122
4TH GENERATION IGBT
CURRENT RESONANCE INVERTER SWITCHING
APPLICATIONS
Unit: mm
• Enhancement mode type
• High speed: t_f = 0.25μs (Typ.) (I_C = 50A)
• Low saturation voltage: VCE (sat) = 2.1V (Typ.) (IC = 50A)
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Collector-emitter voltage
Gate-emitter voltage
Collector current
DC
1 ms
Collector power dissipation
(Tc = 25°C)
V_CES
V_GES
I_C
I_CP
P_C
600
V
±20
V
30
A
100
75
W
Junction temperature
Storage temperature range
T_j
150
°C
JEDEC
―
T_stg
−55~150
°C
JEITA
―
Note: Using continuously under heavy loads (e.g. the application of high
TOSHIBA
2-16F1A
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
Weight: 5.8 g (typ.)
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1
2006-11-01