GT30J121_06 Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – Silicon N Channel IGBT High Power Switching Applications

GT30J121
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT30J121
High Power Switching Applications
Fast Switching Applications
Unit: mm
• Fourth-generation IGBT
• Enhancement mode type
• Fast switching (FS): Operating frequency up to 50 kHz (reference)
High speed: t_f = 0.05 μs (typ.)
Low switching loss : E_on = 1.00 mJ (typ.)
: E_off = 0.80 mJ (typ.)
• Low saturation voltage: V_{CE (sat)} = 2.0 V (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-emitter voltage
Gate-emitter voltage
Collector current
Collector power dissipation
(Tc = 25°C)
Junction temperature
Storage temperature range
DC
1 ms
V_CES
V_GES
I_C
I_CP
P_C
T_j
T_stg
600
V
±20
V
30
A
60
170
W
150
°C
−55 to 150
°C
JEDEC
―
JEITA
―
TOSHIBA
2-16C1C
Weight: 4.6 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Thermal resistance
Symbol
R_{th (j-c)}
Max
0.735
Unit
°C/W
Marking
TOSHIBA
GT30J121
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
1
2006-11-01