GT30J121 Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT

GT30J121
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT30J121
High Power Switching Applications
Fast Switching Applications
Unit: mm
• The 4th generation
• Enhancement-mode
• Fast switching (FS): Operating frequency up to 50 kHz (reference)
High speed: tf = 0.05 µs (typ.)
Low switching loss : Eon = 1.00 mJ (typ.)
: Eoff = 0.80 mJ (typ.)
• Low saturation voltage: VCE (sat) = 2.0 V (typ.)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-emitter voltage
Gate-emitter voltage
Collector current
Collector power dissipation
(Tc = 25°C)
Junction temperature
Storage temperature range
DC
1 ms
V_CES
V_GES
I_C
I_CP
P_C
T_j
T_stg
600
V
±20
V
30
A
60
170
W
150
°C
−55 to 150
°C
Thermal Characteristics
Characteristics
Thermal resistance
Symbol
R_{th (j-c)}
Max
0.735
Unit
°C/W
JEDEC
―
JEITA
―
TOSHIBA
2-16C1C
Weight: 4.6 g (typ.)
1
2002-04-19