GT30J101 Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – Silicon N Channel IGBT

Preliminary
TOSHIBA Insulated Gate Bipolar Transistor
Silicon N Channel IGBT
GT30J101
High Power Switching Applications
GT30J101
Unit: mmç
• The 3rd Generation
• Enhancement-Mode
• High Speed: tf = 0.30 µs (max)
• Low Saturation Voltage: VCE (sat) = 2.7 V (max)
Maximum Ratings (Ta = 25°C)ç
Characteristic
Collector-emitter voltage
Gate-emitter voltage
Collector current
DC
1 ms
Collector power dissipation
(Tc = 25°C)
Junction temperature
Storage temperature range
Symbol
V_CES
V_GES
I_C
I_CP
P_C
T_j
T_stg
Rating
Unit
600
V
±20
V
30
A
60
155
W
150
°C
−55~150
°C
JEDEC
JEITA
TOSHIBA
Weight: 4.6 g
―
―
2-16C1C
1
2002-01-18