GT25Q301 Datasheet, PDF (1/7 Pages) Toshiba Semiconductor – N CHANNEL IGBT(HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)

GT25Q301
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT25Q301
High Power Switching Applications
Motor Control Applications
Unit: mm
· The 3rd generation
· Enhancement-mode
· High speed: tf = 0.32 µs (max)
· Low saturation voltage: VCE (sat) = 2.7 V (max)
· FRD included between emitter and collector
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-emitter voltage
Gate-emitter voltage
Collector current
DC
1 ms
Diode forward current
DC
1 ms
Collector power dissipation
(Tc = 25°C)
Junction temperature
Storage temperature range
Symbol
V_CES
V_GES
I_C
I_CP
I_F
I_FP
P_C
T_j
T_stg
Rating
Unit
1200
V
±20
V
25
A
50
25
A
50
200
W
150
°C
−55 to 150
°C
Equivalent Circuit
Collector
Gate
Emitter
JEDEC
―
JEITA
―
TOSHIBA
2-21F2C
Weight: 9.75 g (typ.)
1
2003-01-28