GT25Q102 Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – N CHANNEL IBGT (HIGH POWER SWITCHING APPLICATIONS)

TOSHIBA Insulated Gate Bipolar Transistor
Silicon N Channel IGBT
GT25Q102
High Power Switching Applications
GT25Q102
Unit: mm
· The 3rd Generation
· Enhancement-Mode
· High Speed: tf = 0.32 µs (max)
· Low Saturation Voltage: VCE (sat) = 2.7 V (max)
Maximum Ratings (Ta = 25°C)
Characteristic
Collector-emitter voltage
Gate-emitter voltage
Collector current
DC
1 ms
Collector power dissipation
(Tc = 25°C)
Junction temperature
Storage temperature range
Symbol
V_CES
V_GES
I_C
I_CP
P_C
T_j
T_stg
Rating
Unit
1200
V
±20
V
25
A
50
200
W
150
°C
-55~150
°C
JEDEC
―
JEITA
―
TOSHIBA
2-21F2C
Weight: 9.75 g (typ.)
1
2003-03-18