GT25G101_06 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – SILICON N−CHANNEL IGBT STROBE FLASH APPLICATIONS

GT25G101
TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N−CHANNEL IGBT
GT25G101
STROBE FLASH APPLICATIONS
Unit in mm
z High Input Impedance
z Low Saturation Voltage
z Enhancement−Mode
z 20V Gate Drive
: V_{CE (sat)}=8V (Max.) (I_C=170A)
ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector−Emitter Voltage
V_CES
400
V
Gate−Emitter Voltage
V_GES
±25
V
Collector Current
DC
I_C
1ms
I_CP
25
A
170
Collector Power
Dissipation
Ta=25°C
P_C
Tc=25°C
P_C
Junction Temperature
T_j
Storage Temperature Range
T_stg
1.3
W
75
150
°C
−55~150
°C
JEDEC
JEITA
TOSHIBA
Weight : 1.5g
―
―
2−10S1C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
ELECTRICAL CHARACTERISTICS (Ta=25°C)
CHARACTERISTIC
Gate Leakage Current
Collector Cut−off Current
Gate−Emitter Cut−off Voltage
Collector−Emitter Saturation Voltage
Input Capacitance
Rise Time
Switching Time
Turn−on Time
Fall Time
Turn−off Time
Thermal Resistance
SYMBOL
TEST CONDITION
I_GES
I_CES
V_{GE (OFF)}
V_{CE (sat)}
C_ies
t_r
t_on
t_f
t_off
R_{th (j−c)}
V_GE=±25V, V_CE=0
V_CE=400V, V_GE=0
I_C=1mA, V_CE=5V
I_C=170A, V_GE=20V (Pulsed)
V_CE=10V, V_GE=0, f=1MHz
―
MIN. TYP. MAX. UNIT
―
― ±100 nA
―
―
10
μA
4
5
7
V
―
5
8
V
― 2000 ―
pF
―
0.1
0.5
― 0.15 0.5
μs
―
4.0
6.0
―
4.5
7.0
―
― 1.66 °C / W
1
2006-11-02