GT25G101SM_06 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – SILICON N−CHANNEL IGBT STROBE FLASH APPLICATIONS

GT25G101(SM)
TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N−CHANNEL IGBT
GT25G101(SM)
STROBE FLASH APPLICATIONS
Unit: mm
z High Input Impedance
z Low Saturation Voltage
z Enhancement−Mode
z 12V Gate Drive
: V_{CE (sat)} = 8V (Max.) (I_C = 170A)
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector−Emitter Voltage
Gate−Emitter Voltage
DC
Collector Current
1ms
Collector Power
Dissipation
Ta = 25°C
Tc = 25°C
Junction Temperature
Storage Temperature Range
V_CES
V_GES
I_C
I_CP
P_C
P_C
T_j
T_stg
400
V
±25
V
25
A
170
1.3
W
75
150
°C
−55~150
°C
JEDEC
JEITA
TOSHIBA
Weight: 1.4g
―
―
2−10S2C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC
Gate Leakage Current
Collector Cut−off Current
Gate−Emitter Cut−off Voltage
Collector−Emitter Saturation Voltage
Input Capacitance
Rise Time
Switching Time
Turn−on Time
Fall Time
Turn−off Time
Thermal Resistance
SYMBOL
TEST CONDITION
I_GES
I_CES
V_{GE (OFF)}
V_{CE (sat)}
C_ies
t_r
t_on
t_f
t_off
R_{th (j−c)}
V_GE = ±25V, V_CE = 0
V_CE = 400V, V_GE = 0
I_C = 1mA, V_CE = 5V
I_C = 170A, V_GE = 20V (Pulsed)
V_CE = 10V, V_GE = 0, f = 1MHz
―
MIN TYP. MAX UNIT
―
― ±100 nA
―
―
10
μA
4
5
7
V
―
5
8
V
― 2000 ―
pF
―
0.1
0.5
― 0.15 0.5
μs
―
4.0
6.0
―
4.5
7.0
―
― 1.66 °C / W
1
2006-11-02