GT25G101 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – N CHANNEL IGBT (STROBE FLASH APPLICATIONS)

GT25G101
TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N−CHANNEL IGBT
GT25G101
STROBE FLASH APPLICATIONS
Unit in mm
l High Input Impedance
l Low Saturation Voltage
l Enhancement−Mode
l 20V Gate Drive
: VCE (sat)=8V (Max.) (IC=170A)
MAXIMUM RATINGS (Ta=25°C)
CHARACTERISTIC
Collector−Emitter Voltage
Gate−Emitter Voltage
DC
Collector Current
1ms
Collector Power
Dissipation
Ta=25°C
Tc=25°C
Junction Temperature
Storage Temperature Range
SYMBOL
V_CES
V_GES
I_C
I_CP
P_C
P_C
T_j
T_stg
RATING
400
±25
25
170
1.3
75
150
−55~150
ELECTRICAL CHARACTERISTICS (Ta=25°C)
UNIT
V
V
A
W
°C
°C
JEDEC
JEITA
TOSHIBA
Weight : 1.5g
―
―
2−10S1C
CHARACTERISTIC
Gate Leakage Current
Collector Cut−off Current
Gate−Emitter Cut−off Voltage
Collector−Emitter Saturation Voltage
Input Capacitance
Rise Time
Switching Time
Turn−on Time
Fall Time
Turn−off Time
Thermal Resistance
SYMBOL
TEST CONDITION
I_GES
I_CES
V_{GE (OFF)}
V_{CE (sat)}
C_ies
t_r
t_on
t_f
t_off
R_{th (j−c)}
V_GE=±25V, V_CE=0
V_CE=400V, V_GE=0
I_C=1mA, V_CE=5V
I_C=170A, V_GE=20V (Pulsed)
V_CE=10V, V_GE=0, f=1MHz
―
MIN. TYP. MAX. UNIT
―
― ±100 nA
―
―
10
µA
4
5
7
V
―
5
8
V
― 2000 ―
pF
―
0.1
0.5
― 0.15 0.5
µs
―
4.0
6.0
―
4.5
7.0
―
― 1.66 °C / W
1
2002-02-06