GT20J321 Datasheet, PDF (1/7 Pages) Toshiba Semiconductor – High Power Switching Applications Fast Switching Applications

GT20J321
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Chanenel IGBT
GT20J321
High Power Switching Applications
Fast Switching Applications
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Unit: mmç
• The 4th generation
• Enhancement-mode
• Fast switching (FS): Operating frequency up to 50 kHz (reference)
High speed: tf = 0.04 µs (typ.)
Low switching loss : Eon = 0.40 mJ (typ.)
: Eoff = 0.43 mJ (typ.)
• Low saturation voltage: VCE (sat) = 2.0 V (typ.)
• FRD included between emitter and collector
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-emitter voltage
Gate-emitter voltage
Collector current
Emitter-collector forward
current
Collector power dissipation
(Tc = 25°C)
Junction temperature
Storage temperature range
DC
1 ms
DC
1 ms
V_CES
V_GES
I_C
I_CP
I_F
I_FM
P_C
T_j
T_stg
600
V
±20
V
20
A
40
20
A
40
45
W
150
°C
−55 to 150
°C
Thermal Characteristics
Characteristics
Thermal resistance (IGBT)
Thermal resistance (diode)
Symbol
R_{th (j-c)}
R_{th (j-c)}
Max
Unit
2.78
°C/W
4.23
°C/W
Equivalent Circuit
Collector
Gate
Emitter
JEDEC
―
JEITA
―
TOSHIBA
2-10R1C
Weight: 1.7 g (typ.)
1
2002-04-08