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GT20J301_06 Datasheet, PDF (1/7 Pages) Toshiba Semiconductor – SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS | |||
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GT20J301
TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT
GT20J301
HIGH POWER SWITCHING APPLICATIONS
MOTOR CONTROL APPLICATIONS
Unit: mm
z Third-generation IGBT
z Enhancement mode type
z High speed
: tf = 0.30μs (Max.)
z Low saturation voltage : VCE (sat) = 2.7V (Max.)
z FRD included between emitter and collector
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
CHARACTERISTIC
SYMBOL
RATING
UNIT
CollectorâEmitter Voltage
GateâEmitter Voltage
DC
Collector Current
1ms
EmitterâCollector Forward
DC
Current
1ms
Collector Power Dissipation
(Tc = 25°C)
Junction Temperature
Storage Temperature Range
VCES
VGES
IC
ICP
IF
IFM
PC
Tj
Tstg
600
V
±20
V
20
A
40
A
20
A
40
A
130
W
150
°C
â55~150
°C
JEDEC
â¯
JEITA
â¯
TOSHIBA
2-16C1C
Weight: 4.6 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(âHandling Precautionsâ/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
EQUIVALENT CIRCUIT
MARKING
TOSHIBA
GT20J301
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
1
2006-11-01
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