GT15Q311 Datasheet, PDF (1/7 Pages) Toshiba Semiconductor – TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT

GT15Q311
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT15Q311
High Power Switching Applications
Motor Control Applications
Unit: mm
· The 3rd generation
· Enhancement-mode
· High speed: tf = 0.32 µs (max)
· Low saturation voltage: VCE (sat) = 2.7 V (max)
· FRD included between emitter and collector
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-emitter voltage
Gate-emitter voltage
Collector current
DC
1 ms
Emitter-collector
forward current
DC
1 ms
Collector power dissipation
(Tc = 25°C)
Junction temperature
Storage temperature range
Symbol
V_CES
V_GES
I_C
I_CP
I_F
I_FM
P_C
T_j
T_stg
Rating
Unit
1200
V
±20
V
15
A
30
15
A
30
160
W
150
°C
−55 to 150
°C
Equivalent Circuit
Collector
Gate
Emitter
JEDEC
―
JEITA
―
TOSHIBA
2-16H1A
Weight: 3.65 g (typ.)
1
2002-10-29