GT15M321_06 Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – HIGH POWER SWITCHING APPLICATIONS

GT15M321
TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT
GT15M321
HIGH POWER SWITCHING APPLICATIONS
z Fourth-generation IGBT
z FRD included between emitter and collector
z Enhancement mode type
z High speed
: t_f = 0.20 μs (TYP.) (I_C = 15 A)
z Low saturation voltage : V_{CE (sat)} = 1.8V (TYP.)
(I_C = 15A)
Unit: mm
ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector−Emitter Voltage
Gate-Emitter Voltage
DC
Collector Current
1ms
Emitter−Collector Foward ^DC
Current
1ms
Collector Power Dissipation
(Tc = 25°C)
Junction Temperature
Storage Temperature Range
V_CES
V_GES
I_C
I_CP
I_F
I_FM
P_C
T_j
T_stg
900
V
±25
V
15
A
30
15
A
120
55
W
150
°C
−55~150
°C
JEDEC
⎯
JEITA
⎯
TOSHIBA
2-16F1A
Weight: 5.8 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
EQUIVALENT CIRCUIT
MARKING
TOSHIBA
GT15M321
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
1
2006-10-31