GT15M321 Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT

GT15M321
TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT
GT15M321
HIGH POWER SWITCHING APPLICATIONS
Unit: mm
l The 4th Generation
l FRD Included Between Emitter and Collector
l Enhancement−Mode
l High Speed
: tf = 0.20 µs (TYP.) (IC = 15 A)
l Low Saturation Voltage : VCE (sat) = 1.8V (TYP.)
(IC = 15A)
MAXIMUM RATINGS (Ta=25°C)
CHARACTERISTIC
Collector−Emitter Voltage
Gate-Emitter Voltage
DC
Collector Current
1ms
Emitter−Collector Foward ^DC
Current
1ms
Collector Power Dissipation
(Tc = 25°C)
Junction Temperature
Storage Temperature Range
SYMBOL
V_CES
V_GES
I_C
I_CP
I_F
I_FM
P_C
T_j
T_stg
RATING
900
±25
15
30
15
120
55
150
−55~150
EQUIVALENT CIRCUIT
UNIT
V
V
A
A
W
°C
°C
JEDEC
JEITA
TOSHIBA
Weight: 5.8 g
―
―
2−16F1A
1
2002-02-06