GT15J331_06 Datasheet, PDF (1/7 Pages) Toshiba Semiconductor – Silicon N Channel IGBT High Power Switching Applications

GT15J331
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT15J331
High Power Switching Applications
Motor Control Applications
• Fourth-generation IGBT
• Enhancement mode type
• High speed: t_f = 0.10 μs (typ.)
• Low saturation voltage: V_{CE (sat)} = 1.75 V (typ.)
• FRD included between emitter and collector
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Collector-emitter voltage
Gate-emitter voltage
Collector current
Emitter-collector forward
current
Collector power dissipation
(Tc = 25°C)
Junction temperature
Storage temperature range
DC
1 ms
DC
1 ms
V_CES
V_GES
I_C
I_CP
I_F
I_FM
P_C
T_j
T_stg
600
V
±20
V
15
A
30
15
A
30
W
70
W
150
°C
−55~150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/Derating Concept and Methods) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
Equivalent Circuit
Marking
Unit: mm
JEDEC
JEITA
TOSHIBA
Weight: 1.5 g
―
―
2-10S1C
Gate
Collector
Emitter
15J331
Part No. (or abbreviation code) ^JEDEC
Lot No.
JEITA
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
TOSHIBA
Weight: 1.4 g
―
―
2-10S2C
1
2006-10-31