GT15J331 Datasheet, PDF (1/7 Pages) Toshiba Semiconductor – High Power Switching Applications Motor Control Applications

GT15J331
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT15J331
High Power Switching Applications
Motor Control Applications
Unit: mm
· The 4th Generation
· Enhancement-Mode
· High Speed: tf = 0.10 µs (typ.)
· Low Saturation Voltage: VCE (sat) = 1.75 V (typ.)
· FRD included between Emitter and collector.
Maximum Ratings (Ta = 25°C)
Characteristic
Collector-emitter voltage
Gate-emitter voltage
Collector current
Emitter-collector forward
current
Collector power dissipation
(Tc = 25°C)
Junction temperature
Storage temperature range
DC
1 ms
DC
1 ms
Symbol
V_CES
V_GES
I_C
I_CP
I_F
I_FM
P_C
T_j
T_stg
Rating
Unit
600
V
±20
V
15
A
30
15
A
30
W
70
W
150
°C
-55~150
°C
Equivalent Circuit
Gate
Collector
Emitter
JEDEC
JEITA
TOSHIBA
Weight: 1.5 g
―
―
2-10S1C
JEDEC
JEITA
TOSHIBA
Weight: 1.4 g
―
―
2-10S2C
1
2002-01-18