GT15J321_06 Datasheet, PDF (1/7 Pages) Toshiba Semiconductor – Silicon N Channel IGBT High Power Switching Applications

GT15J321
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT15J321
High Power Switching Applications
Fast Switching Applications
Unit: mm
• Fourth-generation IGBT
• Fast switching (FS
• Enhancement mode type
• High speed: t_f = 0.03 μs (typ.)
• Low saturation Voltage: V_{CE (sat)} = 1.90 V (typ.)
• FRD included between emitter and collector
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-emitter voltage
Gate-emitter voltage
Collector current
Emitter-collector forward
current
Collector power dissipation
(Tc = 25°C)
Junction temperature
Storage temperature range
DC
1 ms
DC
1 ms
V_CES
V_GES
I_C
I_CP
I_F
I_FM
P_C
T_j
T_stg
600
V
±20
V
15
A
30
15
A
30
30
W
150
°C
−55~150
°C
JEDEC
JEITA
TOSHIBA
Weight: 1.7 g
―
―
2-10R1C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Equivalent Circuit
Marking
Collector
Gate
Emitter
15J321
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
1
2006-10-31