GT15J321 Datasheet, PDF (1/7 Pages) Toshiba Semiconductor – High Power Switching Applications Fast Switching Applications

GT15J321
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT15J321
High Power Switching Applications
Fast Switching Applications
Unit: mmç
• The 4th generation
• FS (fast switching)
• Enhancement-mode
• High speed: tf = 0.03 µs (typ.)
• Low saturation Voltage: VCE (sat) = 1.90 V (typ.)
• FRD included between emitter and collector.
Maximum Ratings (Ta = 25°C)ç
Characteristics
Collector-emitter voltage
Gate-emitter voltage
Collector current
Emitter-collector forward
current
Collector power dissipation
(Tc = 25°C)
Junction temperature
Storage temperature range
DC
1 ms
DC
1 ms
Symbol
V_CES
V_GES
I_C
I_CP
I_F
I_FM
P_C
T_j
T_stg
Rating
Unit
600
V
±20
V
15
A
30
15
A
30
30
W
150
°C
−55~150
°C
Equivalent Circuit
Collector
Gate
Emitter
JEDEC
JEITA
TOSHIBA
Weight: 1.7 g
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2-10R1C
1
2002-01-18