GT15J121 Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – Insulated Gate Bipolar Transistor Silicon N Chanenel IGBT

TOSHIBA
GT15J121
Preliminary ^{TOSHIBA Insulated Gate Bipolar Transistor Silicon N Chanenel IGBT}
GT15J121
High Power Switching Applications
Fast Switching Applications
●　 _{The 4th generation}
●　 _{Enhancement-mode}
●　 _{Ultra Fast Switching(UFS :Operating frequency up to 150kHz(Reference)}
●　 _{High speed}
:t_r=0.03μs(typ.)
:t_f=0.08μs(typ.)
●　 _{Low switching loss}
:E_on=0.23mJ(typ.)
:E_off=0.18mJ(typ.)
Maximum Ratings (Ta=25℃)
Characteristic
Symbol Ratings
Unit
Collector-emitter voltage
V_CES
600
V
Gate-emitter voltage
V_GES
±20
V
Collector current
DC
I_C
15
A
1ms
I_CP
45
Collector power dissipation
(Tc=25℃)
P_C
35
W
Junction temperature
Storage temperature range
T_j
150
℃
T_stg -55～150
℃
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