GT10Q101 Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – High Power Switching Applications

Preliminary
GT10Q101
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT10Q101
High Power Switching Applications
Unit: mmç
• The 3^rd Generation
• Enhancement-Mode
• High Speed: tf = 0.32 µs (max)
• Low Saturation Voltage: VCE (sat) = 2.7 V (max)
Maximum Ratings (Ta = 25°C)ç
Characteristic
Collector-emitter voltage
Gate-emitter voltage
Collector current
DC
1 ms
Collector power dissipation
(Tc = 25°C)
Junction temperature
Storage temperature range
Symbol
V_CES
V_GES
I_C
I_CP
P_C
T_j
T_stg
Rating
Unit
1200
V
±20
V
10
A
20
140
W
150
°C
−55~150
°C
JEDEC
―
JEITA
―
TOSHIBA
2-16C1C
Weight: 4.6 g (typ.)
1
2002-01-23