GT10J321_06 Datasheet, PDF (1/7 Pages) Toshiba Semiconductor – Silicon N Channel IGBT High Power Switching Applications

GT10J321
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT10J321
High Power Switching Applications
Fast Switching Applications
Unit: mm
• Fourth-generation IGBT
• Enhancement mode type
• Fast switching (FS): Operating frequency up to 50 kHz (reference)
• High speed: t_f = 0.03 μs (typ.)
• Low switching loss : E_on = 0.26 mJ (typ.)
: E_off = 0.18 mJ (typ.)
• Low saturation voltage: V_{CE (sat)} = 2.0 V (typ.)
• FRD included between emitter and collector
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-emitter voltage
V_CES
600
V
Gate-emitter voltage
V_GES
±25
V
Continuous Collector ^{@ Tc = 100°C}
current
@ Tc = 25°C
I_C
5
A
10
Pulsed collector current
I_CP
20
A
DC
Diode forward current
I_F
Pulsed
I_FP
Collector power
dissipation
@ Tc = 100°C
P_C
@ Tc = 25°C
Junction temperature
T_j
Storage temperature range
T_stg
10
A
20
11
W
29
150
°C
−55~150
°C
JEDEC
JEITA
TOSHIBA
Weight: 1.7 g
―
―
2-10R1C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Thermal resistance (IGBT)
Thermal resistance (diode)
Symbol
R_{th (j-c)}
R_{th (j-c)}
Max
Unit
4.31
°C/W
4.90
°C/W
Equivalent Circuit
Marking
Gate
Collector
Emitter
K2662
1
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
2006-11-01