GT10J321 Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – TOSHIBA Insulated Gate Bipolar Transistor Silicon N Chanenel IGBT

TOSHIBA
GT10J321
Preliminary TOSHIBA Insulated Gate Bipolar Transistor Silicon N Chanenel IGBT
GT10J321
High Power Switching Applications
Fast Switching Applications
●　 _{The 4th generation}
●　 _{Enhancement-mode}
●　 _{Fast Switching(FS) :Operating frequency up to 150kHz(Reference)}
●　 _{High speed}
:t_f=0.03μs(typ.)
●　 _{Low switching loss :Eon=0.26mJ(typ.)}
:E_off=0.18mJ(typ.)
●　 _{Low saturation voltage} :V_CE(sat)=2.0V(typ.)
●　 _{FRD included between emitter and collector}
Maximum Ratings (Ta=25℃)
Characteristic
Symbol Ratings
Unit
Collector-emitter voltage
V_CES
600
V
Gate-emitter voltage
V_GES
±20
V
Collector current
DC
I_C
10
A
1ms
I_CP
20
Emitter-collector
forward current
DC
I_F
10
A
1ms
I_FM
20
Collector power dissipation
(Tc=25℃)
P_C
29
W
Junction temperature
Storage temperature range
T_j
150
℃
T_stg -55～150
℃
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