GT10J312_06 Datasheet, PDF (1/7 Pages) Toshiba Semiconductor – SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS

GT10J312,GT10J312(SM)
TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT
GT10J312, GT10J312(SM)
HIGH POWER SWITCHING APPLICATIONS
MOTOR CONTROL APPLICATIONS
Unit: mm
z Third-generation IGBT
z Enhancement mode type
z High speed
: t_f = 0.30μs (Max.)
z Low saturation voltage : V_{CE (sat)} = 2.7V (Max.)
z FRD included between emitter and collector
Absolute Maximum Ratings (Ta = 25°C)
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector−Emitter Voltage
Gate−Emitter Voltage
DC
Collector Current
1ms
Emitter−Collector Forward
DC
Current
1ms
Collector Power Dissipation
(Tc = 25°C)
Junction Temperature
Storage Temperature Range
V_CES
V_GES
I_C
I_CP
I_F
I_FM
P_C
T_j
T_stg
600
V
±20
V
10
A
20
A
10
A
20
A
60
W
150
°C
−55~150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/Derating Concept and Methods) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
JEDEC
―
JEITA
―
TOSHIBA
2−10S1C
Weight: 1.5 g (typ.)
Equivalent Circuit
Marking
10J312
JEDEC
―
JEITA
―
Part No. (or abbreviation code) _TOSHIBA
2−10S2C
Lot No.
Weight: 1.4 g (typ.)
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
1
2006-10-31