GT10J301_06 Datasheet, PDF (1/7 Pages) Toshiba Semiconductor – HIGH POWER SWITCHING APPLICATIONS

GT10J301
TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT
GT10J301
HIGH POWER SWITCHING APPLICATIONS
MOTOR CONTROL APPLICATIONS
Unit: mm
z Third-generation IGBT
z Enhancement mode type
z High speed
: t_f = 0.30μs (Max.)
z Low saturation voltage : V_{CE (sat)} = 2.7V (Max.)
z FRD included between emitter and collector
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Emitter Voltage
Gate−Emitter Voltage
DC
Collector Current
1ms
Emitter−Collector
DC
Forward Current
1ms
Collector Power Dissipation
(Tc = 25°C)
Junction Temperature
Storage Temperature Range
V_CES
600
V
V_GES
±20
V
I_C
10
A
I_CP
20
A
I_F
10
A
I_FM
20
A
P_C
90
W
T_j
150
°C
T_stg
−55~150
°C
JEDEC
⎯
JEITA
⎯
TOSHIBA
2-16C1C
Weight: 4.6 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
EQUIVALENT CIRCUIT
MARKING
TOSHIBA
GT10J301
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
1
2006-10-31